q?v~zy??q?v?_ra]?????qcabgq hfu1n60f_hfd1n60f hfu1n60f / hfd1n60f 600v n-channel mosfet oct 2016 parameter value unit bv dss 600 v i d 1a r ds(on), typ 6.5
qg ,typ 3.7 nc key parameters features symbol parameter value unit v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 1.0 a drain current ? continuous (t c = 100 e ) 0.6 a i dm drain current ? pulsed (note 1) 4.0 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 33 mj i ar avalanche current (note 1) 1.0 a e ar repetitive avalanche energy (note 1) 2.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 e )* 2.5 w power dissipation (t c = 25 e ) - derate above 25 e 28 w 0.22 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e symbol parameter value unit r jc junction-to-case, max. 4.53 e /w r ja junction-to-ambient (minimum pad of 2 oz copper), max. 110 e /w r ja junction-to-ambient (* 1 in 2 pad of 2 oz copper), max. 50 e /w thermal resistance characteristics hfu1n60f to-251 hfd1n60f to-252 symbol absolute maximum ratings t c =25 e unless otherwise specified g d s g d s ? originative new design ? very low intrinsic capacitances ? excellent switching characteristics ? 100% avalanche tested ? rohs compliant
q?v~zy??q?v?_ra]?????qcabgq hfu1n60f_hfd1n60f notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=59mh, i as =1a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |